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FMUSER Orihinal na Bagong MGF2430A RF Power Transistor Power MOSFET Transistor
FMUSER Orihinal na Bagong MGF2430A RF Power Transistor Power MOSFET Transistor DESCRIPTION Ang MGF2430A, GaAs FET na may isang N-channel schottkygate, ay idinisenyo para sa L to Ku band amplifiers. TAMPOK ● Mataas na lakas ng outputP1dB = 30.5dBm (TYP) @ f = 14.5GHz ● Mataas na linear gainGLP = 6.5dB (TYP.) @ F = 14.5GHz ● Mataas na lakas na idinagdag kahusayanP.AE = 27% (TYP.) @ F = 14.5 GHz, P1dB ● Hermetically selyadong metal na packageAPPLICATION ● Para sa L to Ku band power amplifiersKALIDAD ● IGOUTLINE DRAWING REKOMENDENG BIAS CONDITIONS ● Vds = 10V Ids = 300mA Rg = 500 ● Ganap na maximum na mga rating ● VGDO Gate sa Source Voltage ● VGSO Gate sa pinagmulan ng boltahe ● IDSS Satu
detalye
| Presyo (USD) | Dami (PCS) | Shipping (USD) | Total (USD) | Pamamaraan ng Pagpapadala | pagbabayad |
| 69 | 1 | 0 | 69 | ermeyl |
FMUSER Orihinal na Bagong MGF2430A RF Power Transistor Power MOSFET Transistor
DESCRIPTION
Ang MGF2430A, GaAs FET na may isang N-channel schottkygate, ay idinisenyo para sa L to Ku band amplifiers.
TAMPOK
●Mataas na output powerP1dB = 30.5dBm (TYP) @ f = 14.5GHz
●Mataas na linear gainGLP = 6.5dB (TYP.) @ F = 14.5GHz
●Mataas na lakas naidagdag kahusayanP.AE = 27% (TYP.) @ F = 14.5GHz, P1dB●Hermetically selyadong metal na packageAPPLICATION
●Para sa L to Ku band power amplifiers QUALITY
●Pagguhit ng IGOUTLINE
Inirekomenda na Kundisyon ng BIAS
●Vds = 10V Ids = 300mA Rg = 500●Ganap na maximum na mga rating
●VGDO Gate sa Pinagmulan ng Boltahe
●VGSO Gate sa mapagkukunan ng boltahe
●IDSS Huling agos ng alisan ng tubig
●IGR Reverse gate kasalukuyang
●IGF Forward kasalukuyang gate
●PT * 1 Kabuuang pagwawaldas ng kuryente
●Tch temperatura ng Cannel
●Temperatura ng imbakan ng Tstg * 1: Tc = 25 ° C (Ta = 25 ° C)
Package isama
1x MGF2430A RF Power Transistor
| Presyo (USD) | Dami (PCS) | Shipping (USD) | Total (USD) | Pamamaraan ng Pagpapadala | pagbabayad |
| 69 | 1 | 0 | 69 | ermeyl |
